Diodes is one of electronic components that aslo called semi-conductors. It has 3 Volt-ampere Characteristics including:

1. Forward features:
Plus the diode forward voltage, anode potential higher than the cathode potential. When the forward voltage is small (less than the threshold voltage), the diode does not conduct. Silicon diode turn-on voltage of about 0.5V, germanium diode turn-on voltage of about 0.1V.

When the forward voltage is large enough, more than the threshold voltage, the internal electric field is greatly weakened, the current rapidly increases, the diode is forward, this time the forward silicon diode voltage drop in the 0.6 ~ 0.8V, the typical value of 0.7 obtained V; germanium diode in the forward voltage drop in the 0.1 ~ 0.3V, typical take 0.2V.

2. Reverse characteristics
Diode reverse voltage, anode potential lower than the cathode potential. It should be noted, silicon germanium tube tube is much smaller than the reverse current, low power silicon tube saturation current is usually less than 0.1μA, germanium tube about a few microamps.

3. Breakdown Characteristics

When the diode reverse voltage exceeds the reverse breakdown voltage is too high, the diode reverse current increased dramatically. As this section of current, high voltage, PN junction large power consumption, easy to burn PN junction overheating, general diode reverse voltage in the tens of volts or more.